ECE6200 Electronic Devices and Circuits
The process of
adding impurities is called ___________. |
Doping |
The process of
imparting impurities to an intrinsic semiconductive material in order to
control its conduction characteristics. |
Doping |
The depletion
region is created by |
Diffusion |
A solid material in
which the atoms are arranged in a symmetrical pattern. |
Crystal |
A trivalent
impurity is added to silicon to create |
A p-type semiconductor |
The majority
carriers in an p-type semiconductor are |
Holes |
Free electrons are
also called __________. |
Conduction electrons |
A pentavalent
impurity is added to silicon to create |
An n-type semiconductor |
The smallest
particle of an element that possesses the unique characteristics of that
element. |
Atom |
Holes in an n-type
semiconductor are |
Minority carriers that
are thermally produced |
The reverse voltage
is ____________ in practical diode model. |
equal to bias voltage |
What happens to the
depletion region during forward bias? |
Narrows |
The connection
wherein the negative terminal of the source is connected to the anode side of
the circuit and the positive terminal is connected to the cathode side. |
Reverse-bias
connection |
The p region of the
diode. |
Anode |
The value of
barrier potential of a diode. |
0.7 V |
The condition that
allows current through the pn junction |
Forward Bias |
The ideal diode
model is represented like a/an __________. |
simple switch |
The n region of the
diode. |
Cathode |
The limit of
external reverse-bias voltage wherein the reverse current will drastically
increase. |
Breakdown voltage |
The bias wherein
the positive side of external voltage is connected to the n region of the
diode and its negative side is connected to the p region. |
Reverse Bias |
The average voltage
of a full-wave rectifier is _____________. |
|
It is created from
the addition of a trivalent impurity in silicon. |
A p-type semiconductor |
The depletion
region is created by |
all of the choices |
A type of current
wherein holes are moving because of the vacancy left in every move of free
electrons. |
hole current |
The bias wherein
the negative side of external voltage is connected to the n region of the
diode and its positive side is connected to the p region. |
Forward Bias |
The smallest
particle of an element that possesses the unique characteristics of that
element. |
Atom |
The process of
imparting impurities to an intrinsic semiconductive material in order to
control its conduction characteristics. |
Doping |
The majority
carriers in an p-type semiconductor are |
Holes |
It means there are
no impurities. |
Intrinsic |
The value of the
forward voltage in practical diode model. |
0.7 V |
The fuse rating
that must be used |
should be at least 20%
larger than the calculated Ipri. |
The smallest
particle of an element that possesses the unique characteristics of that
element. |
Atom |
It determines the
effectiveness of the filter. |
Ripple factor |
A material that
easily conducts electrical current. |
Conductor |
The following are
examples of trivalent atoms except ___________, |
Carbon |
The addition of
impurities to an intrinsic semiconductive material. |
Doping |
The circuit wherein
the during the negative alternation of the ac input voltage, the diode is
reverse-biased and there is no current. |
Full-wave rectifier |
A material that has
no bandgap. |
Conductor |
It states how much
change occurs in the output voltage over a certain range of load current
values. |
Load Regulation |
The bias wherein
the positive side is connected to the p region and the negative side of
external voltage is connected to the n region of the diode. |
Reverse Bias |
It is represented
like a switch. |
Ideal diode model |
The surge current
initially occurs during ________. |
The first turn on of
the power |
The process of
adding impurities is called ___________. |
Doping |
It is the voltage
variation in the capacitor. |
Filter voltage |
It only conducts
current in one direction and block the other direction. |
Diode |
A solid material in
which the atoms are arranged in a symmetrical pattern. |
Crystal |
What happens to the
depletion region during forward bias? |
Narrows |
A pn junction is
formed by |
The boundary of a
p-type and an n-type material |
Free electrons are
also called __________. |
Free electrons are
also called __________. |
The output voltage
of a center-tapped full-wave rectifier is ____________. |
|
It produces an
output voltage from the input voltage with a multiplication factor of two. |
Voltage Doubler |
It adds a dc level
to an ac voltage. |
Diode Clamper |
A circuit of
half-wave voltage doubler with the addition of another diode-capacitor
section. |
Voltage tripler |
A voltage
multiplier that produces an output voltage from the input voltage with a
multiplication factor of four. |
Voltage quadrupler |
A type of limiter
which the level to which an ac voltage can be adjusted by adding a bias
voltage in series with a diode. |
Biased Limiter |
Diode clamper is
also known as __________. |
DC restorer |
Also known as diode
limiter. |
Diode Clipper |
What is called to a
diode clamper which inserts a negative dc level in the waveform? |
Negative clamper |
Another application
of diode circuit which used to clip a portion of signal voltages above or
below certain levels. |
Diode Limiter |
A diode clamper
that inserts a positive dc level in the output waveform. |
Positive clamper |
A special purpose
diode which consists of heavily doped p and n regions separated by an
intrinsic region. |
PIN diode |
An American
Physicist who first describe the properties of breakdown voltage. |
Clarence Melvin Zener |
It has a small
transparent window that allows light to strike the pn junction. |
Photodiode |
A special purpose
diode uses graded doping where the doping level of the semiconductive
materials is reduced as the pn junction is approached. |
Step-recovery diode |
Another name of
constant-current diode. |
Current regulator
diode |
It is used as a
dc-controlled microwave switch operated by rapid changes in bias or as a
modulating device that takes advantage of the variable forward-resistance
characteristic. |
PIN diode |
A semiconductor
operates in the reverse-breakdown region and provides stable reference
voltages |
Zener diode |
High-current diodes
used primarily in high-frequency and fast-switching applications. |
Schottky diode |
Special purpose
diode that is monochromatic and also emits coherent light. |
Laser diode |
It is also known as
tuning diodes. |
Varactor diode |
The two basic
methods to turn off the SCR. |
Anode current
interruption and forced commutation |
Another name is
SUS. |
Shockley diode |
What are the
terminals of SCS? |
Cathode gate, anode
gate, anode and cathode |
The SCS means
________________. |
Silicon controlled
switch |
Another name is
SUS. |
Shockley diode |
What does UJT means? |
Unijunction transistor |
The inventor of
Shockley diode. |
William Shockley |
These are family of
devices constructed of four semiconductor layers. |
Thyristors |
It is a
two-terminal four-layer semiconductor device that conducts current in either
direction when activated. |
Diac |
It is a
two-terminal four-layer semiconductor device that conducts current in either
direction when activated |
Diac |
Type of MOSFET that
can operate in either enhancement mode or depletion mode. |
Depletion MOSFET |
It is another name
for MOSFET because of the polycrystalline silicon used instead of metal for
the gate materials. |
IGFET |
The two types of
JFET. |
N-channel and
P-channel |
This term refers to
the depletion region formed in the channel of a FET because of the voltage
imposed on the gate. |
Field-effect |
The _____________
produces a depletion region along the pn junction. |
Reverse-biased |
The VGS must be
__________ to have channel conductivity in n-channel E-MOSFETS in enhancement
mode, |
Positive |
A type of FET that
operates with a reverse-biased pn junction to control current in a channel. |
JFET |
What is the meaning
of JFET? |
Junction field-effect transistor |
The meaning of
MOSFET. |
Metal Oxide
Semiconductor Field Effect Transistor |
A type of input
signal mode wherein either one signal is applied to an input with the other
input grounded or two opposite-polarity signals are applied to the inputs. |
Differential mode |
The JFET operates
as a |
Voltage-controlled,
constant-current device |
It is a
four-terminal thyristor that has two gate terminals that are used to trigger
the device on and off. |
SCS |
These are the two
types of JFET. |
N-channel and
P-channel |
It is a
two-terminal four-layer semiconductor device that conducts current in either
direction when activated. |
Diac |
It is the
difference of the input bias currents, expressed as an absolute value. |
Input offset current |
The three terminals
of SCR. |
Anode, cathode and gate |
A device that is
like a diac with a gate terminal. |
Triac |
It symbolizes the
broken lines of E-MOSFETs. |
Absence of a physical
channel |
It is a
two-terminal four-layer semiconductor device that conducts current in either
direction when activated. |
Diac |
It has a single pn
junction and therefore, does not belong to the thyristor family. |
UJT |
The three terminals
of SCR. |
Anode, cathode and gate |
The JFET three
terminals. |
Drain, source and gate |
A 4-layer pnpn
device similar to Shockley diode except it has three terminals. |
SCR |
To have channel
conductivity in n-channel E-MOSFETS in enhancement mode, The VGS must be
__________. |
Positive |
The four terminals
of SCS. |
Cathode gate, anode
gate, anode and cathode |
This term refers to
the depletion region formed in the channel of a FET because of the voltage
imposed on the gate. |
Field-effect |
A device that is
like a diac with a gate terminal. |
Triac |
The total
resistance between the base terminals. |
Interbase resistance |
A mode wherein
either one signal is applied to an input with the other input grounded or two
opposite-polarity signals are applied to the inputs. |
Differential mode |
The 4-layer diode. |
Shockley diode |
The two main types
of field effect transistor. |
JFET and MOSFET |
Also known as the
4-layer diode. |
Shockley diode |
The configuration
that has high input impedance and low output impedance. |
Common Collector
Configuration |
What does SCS
means? |
Silicon controlled
switch |
The total
resistance between the base terminals. |
Interbase resistance |
The resistance from
the output. |
Output impedance |
What JFET stands
for? |
Junction field-effect
transistor |
The JFET operates
as a _______________. |
Voltage-controlled,
constant-current device |
What is the meaning
of JFET? |
Junction field-effect
transistor |
What does UJT
means? |
Unijunction transistor |
A single pn
junction device and therefore, does not belong to the thyristor family. |
UJT |
The _____________
produces a depletion region along the pn junction. |
Reverse-biased |
The JFET always
operates with the gate-source on junction _____________. |
Reversed-biased |
The differential dc
voltage required between the inputs to force the output to 0 V. |
Input offset voltage |
The VGS must be
__________ to have channel conductivity in n-channel E-MOSFETS in enhancement
mode, |
Positive |
It is a
field-effect transistor that has no pn junction. |
MOSFET |
A type of FET that
operates with a reverse-biased pn junction to control current in a channel. |
JFET |
These are family of
devices constructed of four semiconductor layers. |
Thyristors |
A four-terminal
thyristor that has two gate terminals that are used to trigger the device on
and off |
SCS |
Type of MOSFET that
operates only in enhancement mode. |
Depletion MOSFET
(WRONG) |
The value of the
voltage gain of a Common Base Configuration. |
Low (WRONG) |
Two basic methods
to turn off the SCR. |
Anode current
interruption and forced commutation |
A type of FET that
operates with a reverse-biased pn junction to control current in a channel. |
JFET |
A 4-layer pnpn
device similar to Shockley diode except it has three terminals. |
SCR |
The inventor of
Shockley diode. |
William Shockley |
It is a
field-effect transistor that has no pn junction. |
MOSFET |
Another name is
SUS. |
Shockley diode |
What are the
terminals of UJT? |
Emitter, base 1 and
base 2 |
The transistor
configuration that has a 180 out of phase relationship. |
Common Emitter
Configuration |
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