Saturday, July 3, 2021

Electronic Devices and Circuits

 ECE6200 Electronic Devices and Circuits


The process of adding impurities is called ___________.

Doping

The process of imparting impurities to an intrinsic semiconductive material in order to control its conduction characteristics.

Doping

The depletion region is created by

Diffusion

A solid material in which the atoms are arranged in a symmetrical pattern.

Crystal

A trivalent impurity is added to silicon to create

A p-type semiconductor

The majority carriers in an p-type semiconductor are

Holes

Free electrons are also called __________.

Conduction electrons

A pentavalent impurity is added to silicon to create

An n-type semiconductor

The smallest particle of an element that possesses the unique characteristics of that element.

Atom

Holes in an n-type semiconductor are

Minority carriers that are thermally produced

The reverse voltage is ____________ in practical diode model.

equal to bias voltage

What happens to the depletion region during forward bias?

Narrows

The connection wherein the negative terminal of the source is connected to the anode side of the circuit and the positive terminal is connected to the cathode side.

Reverse-bias connection

The p region of the diode.

Anode

The value of barrier potential of a diode.

0.7 V

The condition that allows current through the pn junction

Forward Bias

The ideal diode model is represented like a/an __________.

simple switch

The n region of the diode.

Cathode

The limit of external reverse-bias voltage wherein the reverse current will drastically increase.

Breakdown voltage

The bias wherein the positive side of external voltage is connected to the n region of the diode and its negative side is connected to the p region.

Reverse Bias

The average voltage of a full-wave rectifier is _____________.

The average voltage of a full-wave rectifier is

 

It is created from the addition of a trivalent impurity in silicon.

A p-type semiconductor

The depletion region is created by

all of the choices

A type of current wherein holes are moving because of the vacancy left in every move of free electrons.

hole current

The bias wherein the negative side of external voltage is connected to the n region of the diode and its positive side is connected to the p region.

Forward Bias

The smallest particle of an element that possesses the unique characteristics of that element.

Atom

The process of imparting impurities to an intrinsic semiconductive material in order to control its conduction characteristics.

Doping

The majority carriers in an p-type semiconductor are

Holes

It means there are no impurities.

Intrinsic

The value of the forward voltage in practical diode model.

0.7 V

The fuse rating that must be used

should be at least 20% larger than the calculated Ipri.

The smallest particle of an element that possesses the unique characteristics of that element.

Atom

It determines the effectiveness of the filter.

Ripple factor

A material that easily conducts electrical current.

Conductor

The following are examples of trivalent atoms except ___________,

Carbon

The addition of impurities to an intrinsic semiconductive material.

Doping

The circuit wherein the during the negative alternation of the ac input voltage, the diode is reverse-biased and there is no current.

Full-wave rectifier

A material that has no bandgap.

Conductor

It states how much change occurs in the output voltage over a certain range of load current values.

Load Regulation

The bias wherein the positive side is connected to the p region and the negative side of external voltage is connected to the n region of the diode.

Reverse Bias

It is represented like a switch.

Ideal diode model

The surge current initially occurs during ________.

The first turn on of the power

The process of adding impurities is called ___________.

Doping

It is the voltage variation in the capacitor.

Filter voltage

It only conducts current in one direction and block the other direction.

Diode

A solid material in which the atoms are arranged in a symmetrical pattern.

Crystal

What happens to the depletion region during forward bias?

Narrows

A pn junction is formed by

The boundary of a p-type and an n-type material

Free electrons are also called __________.

Free electrons are also called __________.

The output voltage of a center-tapped full-wave rectifier is ____________.

 

The output voltage of a center-tapped full-wave rectifier is

It produces an output voltage from the input voltage with a multiplication factor of two.

Voltage Doubler

It adds a dc level to an ac voltage.

Diode Clamper

A circuit of half-wave voltage doubler with the addition of another diode-capacitor section.

Voltage tripler

A voltage multiplier that produces an output voltage from the input voltage with a multiplication factor of four.

Voltage quadrupler

A type of limiter which the level to which an ac voltage can be adjusted by adding a bias voltage in series with a diode.

Biased Limiter

Diode clamper is also known as __________.

DC restorer

Also known as diode limiter.

Diode Clipper

What is called to a diode clamper which inserts a negative dc level in the waveform?

Negative clamper

Another application of diode circuit which used to clip a portion of signal voltages above or below certain levels.

Diode Limiter

A diode clamper that inserts a positive dc level in the output waveform.

Positive clamper

A special purpose diode which consists of heavily doped p and n regions separated by an intrinsic region.

PIN diode

An American Physicist who first describe the properties of breakdown voltage.

Clarence Melvin Zener

It has a small transparent window that allows light to strike the pn junction.

Photodiode

A special purpose diode uses graded doping where the doping level of the semiconductive materials is reduced as the pn junction is approached.

Step-recovery diode

Another name of constant-current diode.

Current regulator diode

It is used as a dc-controlled microwave switch operated by rapid changes in bias or as a modulating device that takes advantage of the variable forward-resistance characteristic.

PIN diode

A semiconductor operates in the reverse-breakdown region and provides stable reference voltages

Zener diode

High-current diodes used primarily in high-frequency and fast-switching applications.

Schottky diode

Special purpose diode that is monochromatic and also emits coherent light.

Laser diode

It is also known as tuning diodes.

Varactor diode

The two basic methods to turn off the SCR.

Anode current interruption and forced commutation

Another name is SUS.

Shockley diode

What are the terminals of SCS?

Cathode gate, anode gate, anode and cathode

The SCS means ________________.

Silicon controlled switch

Another name is SUS.

Shockley diode

What does UJT means?

Unijunction transistor

The inventor of Shockley diode.

William Shockley

These are family of devices constructed of four semiconductor layers.

Thyristors

It is a two-terminal four-layer semiconductor device that conducts current in either direction when activated.

Diac

It is a two-terminal four-layer semiconductor device that conducts current in either direction when activated

Diac

Type of MOSFET that can operate in either enhancement mode or depletion mode.

Depletion MOSFET

It is another name for MOSFET because of the polycrystalline silicon used instead of metal for the gate materials.

IGFET

The two types of JFET.

N-channel and P-channel

This term refers to the depletion region formed in the channel of a FET because of the voltage imposed on the gate.

Field-effect

The _____________ produces a depletion region along the pn junction.

Reverse-biased

The VGS must be __________ to have channel conductivity in n-channel E-MOSFETS in enhancement mode,

Positive

A type of FET that operates with a reverse-biased pn junction to control current in a channel.

JFET

What is the meaning of JFET?

Junction field-effect transistor

The meaning of MOSFET.

Metal Oxide Semiconductor Field Effect Transistor

A type of input signal mode wherein either one signal is applied to an input with the other input grounded or two opposite-polarity signals are applied to the inputs.

Differential mode

The JFET operates as a

Voltage-controlled, constant-current device

It is a four-terminal thyristor that has two gate terminals that are used to trigger the device on and off.

SCS

These are the two types of JFET.

N-channel and P-channel

It is a two-terminal four-layer semiconductor device that conducts current in either direction when activated.

Diac

It is the difference of the input bias currents, expressed as an absolute value.

Input offset current

The three terminals of SCR.

Anode, cathode and gate

A device that is like a diac with a gate terminal.

Triac

It symbolizes the broken lines of E-MOSFETs.

Absence of a physical channel

It is a two-terminal four-layer semiconductor device that conducts current in either direction when activated.

Diac

It has a single pn junction and therefore, does not belong to the thyristor family.

UJT

The three terminals of SCR.

Anode, cathode and gate

The JFET three terminals.

Drain, source and gate

A 4-layer pnpn device similar to Shockley diode except it has three terminals.

SCR

To have channel conductivity in n-channel E-MOSFETS in enhancement mode, The VGS must be __________.

Positive

The four terminals of SCS.

Cathode gate, anode gate, anode and cathode

This term refers to the depletion region formed in the channel of a FET because of the voltage imposed on the gate.

Field-effect

A device that is like a diac with a gate terminal.

Triac

The total resistance between the base terminals.

Interbase resistance

A mode wherein either one signal is applied to an input with the other input grounded or two opposite-polarity signals are applied to the inputs.

Differential mode

The 4-layer diode.

Shockley diode

The two main types of field effect transistor.

JFET and MOSFET

Also known as the 4-layer diode.

Shockley diode

The configuration that has high input impedance and low output impedance.

Common Collector Configuration

What does SCS means?

Silicon controlled switch

The total resistance between the base terminals.

Interbase resistance

The resistance from the output.

Output impedance

What JFET stands for?

Junction field-effect transistor

The JFET operates as a _______________.

Voltage-controlled, constant-current device

What is the meaning of JFET?

Junction field-effect transistor

What does UJT means?

Unijunction transistor

A single pn junction device and therefore, does not belong to the thyristor family.

UJT

The _____________ produces a depletion region along the pn junction.

Reverse-biased

The JFET always operates with the gate-source on junction _____________.

Reversed-biased

The differential dc voltage required between the inputs to force the output to 0 V.

Input offset voltage

The VGS must be __________ to have channel conductivity in n-channel E-MOSFETS in enhancement mode,

Positive

It is a field-effect transistor that has no pn junction.

MOSFET

A type of FET that operates with a reverse-biased pn junction to control current in a channel.

JFET

These are family of devices constructed of four semiconductor layers.

Thyristors

A four-terminal thyristor that has two gate terminals that are used to trigger the device on and off

SCS

Type of MOSFET that operates only in enhancement mode.

Depletion MOSFET (WRONG)

The value of the voltage gain of a Common Base Configuration.

Low (WRONG)

Two basic methods to turn off the SCR.

Anode current interruption and forced commutation

A type of FET that operates with a reverse-biased pn junction to control current in a channel.

JFET

A 4-layer pnpn device similar to Shockley diode except it has three terminals.

SCR

The inventor of Shockley diode.

William Shockley

It is a field-effect transistor that has no pn junction.

MOSFET

Another name is SUS.

Shockley diode

What are the terminals of UJT?

Emitter, base 1 and base 2

The transistor configuration that has a 180 out of phase relationship.

Common Emitter Configuration

 

CTTO: JAES

No comments:

Post a Comment